| 摘要 |
PURPOSE: A resist composition and a formation method of a resist pattern are provided to offer excellent applicability, resolving potency, and lithography characteristic. CONSTITUTION: A resist composition contains a substrate component in which the solubility about a developer changes by the action of acid, an acid generator component generating acid by exposure, and an organic solvent component. The organic solvent component contains an organic solvent formed of a compound denoted by general formula s-1. The acid generator component is formed of onium salt. A formation method of a resist pattern comprises the following steps: forming a resist film on a supporter using the resist composition; exposing the resist film; and developing the resist film. |
