| 摘要 |
A first semiconductor area (FD1) is arranged inside of a charge generating area, in which charge is generated in response to incident light, so as to be surrounded by the charge generating area, and collects signal charge from the charge generating area. A third semiconductor area (FD31) is arranged outside of the charge generating area so as to surround said area, and collects unnecessary charge from the charge generating area. A photogate electrode (PG1) is arranged on the charge generating area. A first gate electrode (TX1) is arranged between the first semiconductor area (FD1) and the charge generating area, and causes the signal charge from the charge generating area to flow into the first semi conductor area (FD1) in response to an input signal. A third gate electrode (TX31) is arranged between the third semiconductor area (FD31) and the charge generating area, and causes the unnecessary charge from the charge generating area to flow into the third semi conductor area (FD31) in response to an input signal. |
