DEVICE SYSTEM STRUCTURE BASED ON HYBRID-ORIENTATION SOI AND CHANNEL STRESS, AND PREPARATION METHOD THEREFOR

摘要

Provided are a device system structure based on a hybrid-orientation silicon-on-insulator (SOI) and channel stress, and a preparation method therefor. According to the preparation method, first, a (100)/(110) global hybrid-orientation SOI structure is prepared; then, a relaxed silicon germanium layer and a strained silicon layer are epitaxially formed on the global hybrid-orientation SOI structure in sequence; a (110) epitaxial pattern window is formed; a (110) silicon layer and a non-relaxed silicon germanium layer are epitaxially formed at the (110) epitaxial pattern window, and surface planarization is performed on the patterned hybrid orientation SOI structure; an isolation structure for isolating devices is formed; finally, a P-type high-voltage device structure is prepared on a (110) substrate portion, and an N-type high-voltage device structure and/or low-voltage device structure is prepared on the (110) substrate portion. This can effectively improve the carrier mobility of the devices, the on-resistance (Rdson) of high-voltage devices, and the performance of the devices, thereby further improving the integration level and reducing the power consumption.