METHOD FOR THE THERMAL TREATMENT OF SILICON CARBIDE SUBSTRATES

摘要

A description is given of a method for the thermal treatment of silicon carbide substrates having at least one surface to be treated, wherein a multiplicity of silicon carbide substrates arranged in a treatment chamber and optionally at least one silicon-containing sacrificial substrate arranged in the treatment chamber are heated to a treatment temperature (T), and a silicon partial pressure adjacent to at least the surface of the silicon carbide substrate that is to be treated is increased by the outgassing of silicon from the at least one sacrificial substrate. In the method, the multiplicity of silicon carbide substrates are preferably arranged in a treatment chamber in such a way that the respective surfaces to be treated of the silicon carbide substrates lie opposite a surface containing at least silicon and the two opposite surfaces together with a ring element form a substantially closed chamber, thereby substantially promoting gas exchange between the treatment chamber and the chamber formed by the surfaces and the ring element during heating. The at least one optional sacrificial substrate is chosen such that at the treatment temperature (T) it outgases per unit area an amount of silicon that is the same as or greater than that of the surface of the silicon carbide substrates that are to be treated. Furthermore, a description is given of a device for the thermal treatment of silicon carbide substrates and a device for use as a sacrificial substrate in the above method, which has a carrier and a carrier cover that together form a closed receptacle space for receiving a wafer-type silicon carbide substrate, wherein at least the carrier cover is embodied as a silicon-containing sacrificial substrate.