| 摘要 |
The method comprises forming a tantalum pentoxide layer on a titanium nitride support by a plasma-enhanced atomic layer deposition process, subjecting the obtained structure to nitrous oxide for a sufficient time to oxidize the tantalum pentoxide layer, and cutting the structure and analyzing a composition of interface. The tantalum pentoxide layer is reoxidized, after the steps of cutting the structure and analyzing the composition of interface. During the application of nitrous oxide plasma, a temperature of a substrate is maintained at 370-390[deg] C. The method comprises forming a tantalum pentoxide layer on a titanium nitride support by a plasma-enhanced atomic layer deposition process, subjecting the obtained structure to nitrous oxide for a sufficient time to oxidize the tantalum pentoxide layer, and cutting the structure and analyzing a composition of interface. The tantalum pentoxide layer is reoxidized, after the steps of cutting the structure and analyzing the composition of interface. During the application of nitrous oxide plasma, a temperature of a substrate is maintained at 370-390[deg] C. During the oxidation of plasma, a partial pressure of the nitrous oxide is maintained at 400-600 Pa. An INDEPENDENT CLAIM is included for a capacitor. |
