发明名称 METHOD FOR PREPARING LOW-MELTING-POINT PLATING SOLUTION FOR ELECTRICAL ALUMINUM PLATING, PLATING SOLUTION FOR ELECTRICAL ALUMINUM PLATING, METHOD FOR PRODUCING ALUMINUM FOIL, AND METHOD FOR LOWERING MELTING POINT OF PLATING SOLUTION FOR ELECTRICAL ALUMINUM PLATING
摘要 The present invention is characterized in that, in the preparation of a plating solution comprising at least (1) a dialkyl sulfone, (2) an aluminum halide and (3) a nitrogenated compound, the dialkyl sulfone, the aluminum halide and the nitrogenated compound are compounded at such a ratio that the amount of the aluminum halide is 3.5+n to 4.2+n mole(s) and the amount of the nitrogenated compound is n mole(s) (wherein n is 0.001 to 2.0 moles) relative to 10 moles of the dialkyl sulfone. A plating solution for electrical aluminum plating, which is prepared by the method according to the present invention, enables an electrical plating treatment with high aluminum deposition efficiency relative to the amount of electricity supplied, and therefore enables the reduction in electricity usage and has the advantage of excellent economic efficiency.
申请公布号 WO2013129479(A1) 申请公布日期 2013.09.06
申请号 WO2013JP55149 申请日期 2013.02.27
申请人 HITACHI METALS, LTD. 发明人 OKAMOTO ATSUSHI;MATSUDA JUNICHI
分类号 C25D3/44;C25D1/04 主分类号 C25D3/44
代理机构 代理人
主权项
地址