| 摘要 |
The invention relates to a semiconductor structure (5) capable of receiving electromagnetic radiation and converting same into an electrical signal, the structure comprising first and second zones (20, 60) having the same type of conductivity and consisting of the same elements. The structure further comprises a barrier zone (40), which is arranged between the first zone and the second zone (20, 60) and which is to be used as a barrier to the majority carriers of the first and second zones (20, 60) over a barrier thickness. A first interface zone (30) forms an interface between the first zone (20) and the barrier zone (40) over a first interface thickness (e2), and a second interface zone (50) is arranged between the barrier zone (40) and the second zone (60) over a second interface thickness (e3). The interface zones (30, 50) have a composition of elements that varies from the first and second material zones, respectively, to the composition of the barrier, the first interface thickness (e2) being at least equal to half of the barrier thickness (e1) and the second interface thickness (e3) being less than half of the barrier thickness (e1). |
