| 摘要 |
Provided is a compound semiconductor solar cell with improved conversion efficiency. The compound semiconductor solar cell includes a substrate, a back electrode disposed on the substrate, a p-type compound semiconductor light absorber layer disposed on the back electrode, an n-type compound semiconductor buffer layer disposed on the p-type compound semiconductor light absorber layer, and a transparent electrode disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorber layer is formed of (AgxCu1-x)2aZnb(GeySn1-y)c(S1-zSez)4, wherein 0 < x < 1, 0 < y < 1, 0 < z < 1, 0.5 < a < 1.5, 0.5 < b < 1.5, and 0.5 < c < 1.5. The n-type compound semiconductor buffer layer contains at least one of tin and germanium. The n-type compound semiconductor buffer layer has a lower tin and germanium concentration than the p-type compound semiconductor light absorber layer. |
