摘要 |
<p>Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAIN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TilnN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.</p> |
申请人 |
APPLIED MATERIALS, INC.;LEI, YU;GANDIKOTA, SRINIVAS;FU, XINYU;TANG, WEI;NOORI, ATIF |
发明人 |
LEI, YU;GANDIKOTA, SRINIVAS;FU, XINYU;TANG, WEI;NOORI, ATIF |