发明名称 |
THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME |
摘要 |
The present invention provides: a thermoelectric conversion material which has low thermal conductivity and improved thermoelectric performance index; and a method for producing the thermoelectric conversion material. A thermoelectric conversion material that is obtained by forming a thermoelectric semiconductor layer, which is a film formed from a thermoelectric semiconductor material, on a substrate that has a nanostructure with micropores of nanometer order. The substrate is a block copolymer substrate which is formed of a block copolymer that is configured of a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit. The thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. A method for producing a thermoelectric conversion material, which comprises: a substrate formation step wherein a block copolymer substrate having the above-described nanostructure is formed; and a film formation step wherein a thermoelectric semiconductor layer is formed by forming a film from a p-type bismuth telluride or an n-type bismuth telluride. |
申请公布号 |
WO2013129189(A1) |
申请公布日期 |
2013.09.06 |
申请号 |
WO2013JP54029 |
申请日期 |
2013.02.19 |
申请人 |
KYUSHU UNIVERSITY;LINTEC CORPORATION |
发明人 |
KATO, KUNIHISA;ADACHI, CHIHAYA;MIYAZAKI, KOJI;HAYAKAWA, TERUAKI |
分类号 |
H01L35/32;H01L35/16;H01L35/34 |
主分类号 |
H01L35/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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