发明名称 THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME
摘要 The present invention provides: a thermoelectric conversion material which has low thermal conductivity and improved thermoelectric performance index; and a method for producing the thermoelectric conversion material. A thermoelectric conversion material that is obtained by forming a thermoelectric semiconductor layer, which is a film formed from a thermoelectric semiconductor material, on a substrate that has a nanostructure with micropores of nanometer order. The substrate is a block copolymer substrate which is formed of a block copolymer that is configured of a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit. The thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. A method for producing a thermoelectric conversion material, which comprises: a substrate formation step wherein a block copolymer substrate having the above-described nanostructure is formed; and a film formation step wherein a thermoelectric semiconductor layer is formed by forming a film from a p-type bismuth telluride or an n-type bismuth telluride.
申请公布号 WO2013129189(A1) 申请公布日期 2013.09.06
申请号 WO2013JP54029 申请日期 2013.02.19
申请人 KYUSHU UNIVERSITY;LINTEC CORPORATION 发明人 KATO, KUNIHISA;ADACHI, CHIHAYA;MIYAZAKI, KOJI;HAYAKAWA, TERUAKI
分类号 H01L35/32;H01L35/16;H01L35/34 主分类号 H01L35/32
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