| 摘要 |
A metal layer (3c) comprising a metal A (a metal composed mainly of at least one type of metal selected from a group comprising aluminum, copper, silver and gold) is formed on a joining surface of a semiconductor chip (3). Meanwhile, a metal B (a metal composed mainly of at least one type of metal selected from a group comprising aluminum, copper, silver and gold, but excluding the case in which metals A and B are composed mainly of gold) is used as at least a joining surface of a wiring metal (2). Microscopic grooves (2r) are disposed on the joining surface of the wiring metal (2), and an insert material, which contains zinc as a metal for producing a eutectic reaction with each of metal A and a metal other than gold contained in metal B, is disposed between both joining surfaces. The semiconductor chip (3) and the wiring metal (2) are relatively pressurized while being heated, destroying oxide films (3f, 2f) on the joining surfaces, and discharging said oxide films with molten material from the eutectic reaction produced at the joining interfaces, thereby joining the semiconductor chip and the wiring metal. |
