| 摘要 |
<p>[Problem] To provide a CIGS compound semiconductor solar cell capable of maintaining a high conversion efficiency when compared to conventional CIGS compound semiconductor solar cells, even if illuminance is low. [Solution] A compound semiconductor solar cell according to the present invention is provided with: a substrate; a rear-surface electrode provided on the substrate; a p-type compound-semiconductor light-absorption layer provided on the rear-surface electrode; an n-type compound-semiconductor buffer layer provided on the p-type compound-semiconductor light-absorption layer; and a transparent electrode provided on the n-type compound-semiconductor buffer layer. The cross-sectional structure of the p-type compound-semiconductor light-absorption layer has, in the width direction, a section having only single particles, and a section having a plurality of stacked particles. In the section having a plurality of stacked particles, the ratio (y1) of Ga particles in contact with the rear-surface electrode to (In+Ga) and the ratio (y2) of Ga particles in contact with the n-type compound-semiconductor buffer layer to (In+Ga) satisfy the relationship y1 > y2.</p> |
