| 摘要 |
<p>[Problem] To provide a solar cell which is increased in the conversion efficiency in comparison to conventional solar cells that use chalcopyrite-type p-type light absorption layers. [Solution] A light absorption layer of a solar cell of the present invention is a p-type semiconductor layer that contains Cu, Ga and an element that is selected from among the group VIb elements. In the photoluminescence spectrum or the cathode luminescence spectrum obtained from the light absorption layer, there is an emission peak that has a half value width of from 1 meV to 15 meV (inclusive). With respect to the surface of the light absorption layer, the ratio of the surface area of the whole film occupied by the particles having particle diameters of from 2 mum to 8 mum (inclusive) is 90% or more.</p> |
