发明名称 TECHNIQUE TO MODIFY THE MICROSTRUCTURE OF SEMICONDUCTING MATERIALS
摘要 A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material.
申请公布号 KR20130099971(A) 申请公布日期 2013.09.06
申请号 KR20137009950 申请日期 2011.09.12
申请人 CORNING INCORPORATED 发明人 COOK GLEN B.;MAZUMDER PRANTIK;PATIL MALLANAGOUDA DYAMANAGOUDA;TIAN LILI;VENKATARAMAN NATESAN
分类号 C30B29/06;C30B11/00;C30B13/14;C30B13/24 主分类号 C30B29/06
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