IMPROVED CHAMBER CLEANING METHOD AND APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide an apparatus which increases a cleaning speed of a chamber where a thin film transistor and other semiconductor devices are manufactured by chemical vapor deposition etc.SOLUTION: An apparatus includes: a remote plasma chamber 50 where a reactive gas chemical species chemically cleaning deposited substances from the chamber is generated; and an aluminum process chamber where a surface that is subject to the reactive gas chemical species has a mirror polished surface. In order to improve the chamber cleaning efficiency, the mirror polished surface 64 is formed by a surface of a gas distribution plate 12 or a backing plate 13 etc. and/or surfaces of a chamber wall liner 29 and a gas conductance line 48 etc. that are subject to the reactive chemical species. All of the aluminum surfaces, with which the reactive chemical species contact, are mirror polished.