发明名称 |
LIGHT EMITTING DEVICE WITH GRADED COMPOSITION HOLE TUNNELING LAYER |
摘要 |
A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer comprises a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transport efficiency of the holes to increase the light emitting efficiency of the light emitting device.
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申请公布号 |
US2013228806(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201213551068 |
申请日期 |
2012.07.17 |
申请人 |
WANG CHAO-HSUN;KUO HAO-CHUNG;NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
WANG CHAO-HSUN;KUO HAO-CHUNG |
分类号 |
H01L33/40 |
主分类号 |
H01L33/40 |
代理机构 |
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