发明名称 |
METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
According to one embodiment, a method is disclosed for manufacturing nonvolatile semiconductor memory device including forming a stacked body by alternately stacking an electrode layer and a layer-to-be-etched, and forming an oxidized layer between the layer-to-be-etched provided at least in any side of an upper side and a lower side of the electrode layer and the electrode layer. The method can include forming a groove which passes through the stacked body. The method can include embedding an insulating body within the groove. The method can include forming a hole which passes through the stacked body. The method can include selectively removing the layer-to-be-etched via the hole. The method can include forming a charge storage layer in an inner side of the hole. The method can include forming a channel body layer in an inner side of the charge storage layer. |
申请公布号 |
US2013228841(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201213601493 |
申请日期 |
2012.08.31 |
申请人 |
KUBOI SHUICHI;IGUCHI TADASHI;IWASE MASAO;MATSUDA TORU;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUBOI SHUICHI;IGUCHI TADASHI;IWASE MASAO;MATSUDA TORU |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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