发明名称 |
GATE STRUCTURE FOR SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device and method of fabricating thereof is described that includes a substrate having a fin with a top surface and a first and second lateral sidewall. A hard mask layer may be formed on the top surface of the fin (e.g., providing a dual-gate device). A gate dielectric layer and work function metal layer are formed on the first and second lateral sidewalls of the fin. A silicide layer is formed on the work function metal layer on the first and the second lateral sidewalls of the fin. The silicide layer may be a fully-silicided layer and may provide a stress to the channel region of the device disposed in the fin. |
申请公布号 |
US2013228830(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201213411304 |
申请日期 |
2012.03.02 |
申请人 |
LEE TSUNG-LIN;YUAN FENG;YEH CHIH CHIEH;LAI WEI-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ("TSMC") |
发明人 |
LEE TSUNG-LIN;YUAN FENG;YEH CHIH CHIEH;LAI WEI-JEN |
分类号 |
H01L29/78;H01L21/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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