发明名称 |
HIGH POWER, HIGH EFFICIENCY QUANTUM CASCADE LASERS WITH REDUCED ELECTRON LEAKAGE |
摘要 |
Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics. |
申请公布号 |
KR20130099043(A) |
申请公布日期 |
2013.09.05 |
申请号 |
KR20137006175 |
申请日期 |
2011.06.03 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
BOTEZ DAN;SHIN, JAE CHEOL |
分类号 |
H01S5/34 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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