| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem with a conventional solid state image sensor having a ring-shaped gate electrode, that it consumes a large amount of power and therefore requires a booster circuit, and that when one gate electrode for transfer purposes is included to realize a batch shutter, the charge to voltage conversion rate is lowered.SOLUTION: A solid state image sensor of the present invention is such that there is a p-type region 37 in only the vicinity of a source region 36, and that the other regions beneath a ring-shaped gate electrode 35 are of n type (n well) 33. Consequently, since the p-type region itself exists in only the vicinity of the source region 36 from the beginning as indicated at 37, the concentration of this source-neighborhood p-type region 37 can be lowered. As a result, a reset voltage used for discharging holes (electrical charges) accumulated in the source-neighborhood p-type region 37 to the substrate can be lowered. Also, since a transfer purpose transistor connected to a transfer gate electrode 41 is formed, electrical charges in all pixels can be transferred at the same time, making it possible to realize a batch shutter. |
