发明名称 APPARATUS AND METHOD FOR ETCHING WAFER
摘要 PURPOSE: A wafer etching apparatus and a wafer etching method are provided to spray the desired quantity of etchants on a wafer through an etchant nozzle formed on a chuck body part. CONSTITUTION: A chuck supporting unit (100) supports a chuck body part (200). An adhesion part (510,520) is interposed between a wafer and the chuck body part. A vacuum line (210) is arranged on the chuck body part and reduces pressure between the wafer and the chuck body part. An inlet (211) of the vacuum line is formed on the lower side of the chuck body part. The adhesion part surrounds the inlet of the vacuum line. An etchant nozzle (221) is formed on the lower side of the chuck body part to face the upper side of the wafer.
申请公布号 KR20130098782(A) 申请公布日期 2013.09.05
申请号 KR20120020578 申请日期 2012.02.28
申请人 LG SILTRON INCORPORATED 发明人 LEE, HYUNG HO;LEE, TAK KYUM
分类号 H01L21/306 主分类号 H01L21/306
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