| 摘要 |
PROBLEM TO BE SOLVED: To provide: a semiconductor device including a transistor using an oxide semiconductor film, which provides stable electric characteristics and achieves high reliability; and a structure of the semiconductor device, which achieves high-speed response and high-speed driving.SOLUTION: In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in order and a sidewall insulating layer is provided on the side surface of the gate electrode layer, the sidewall insulating layer has an oxygen-excess regions, which is formed as follows: a first insulating film is formed and then subjected to oxygen doping treatment; a second insulating film is formed over the first insulating film; and a stacked layer of the first insulating film and the second insulating film are etched. |
