| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal quality evaluation method of Si crystal for solar cell using a 4-probe resistance measurement method and capable of measuring a crystal quality evaluation value reflecting defect distribution in the Si crystal for solar cell, and to provide a crystal quality evaluation device.SOLUTION: In the crystal quality evaluation method of Si crystal for solar cell using a 4-probe resistance measurement method, selecting each interval between 4 probes larger than the thickness of Si crystal, and increasing the current being fed between probes at both ends gradually as a modulation current, the crystal quality of Si crystal for solar cell is evaluated using a graph where the abscissa axis represents the value of modulation current and the ordinate axis represents the value of resistance. |
