| 摘要 |
PROBLEM TO BE SOLVED: To form an oxide thin film, which can be used as a gate oxide film of a field effect transistor, at a low temperature.SOLUTION: A metal oxide thin film is formed by repeating: a first step for adsorbing organic metal gas molecules on a deposition surface by holding a deposition object at 0°C-150°C, and introducing organic metal gas onto the deposition surface of the deposition object; and a second step for oxidizing and decomposing the organic metal gas molecules thus adsorbed into a metal oxide by introducing plasmatized steam onto the deposition surface to which the organic metal gas molecules are adsorbed, and forming a hydroxyl group on that surface. |
