发明名称 |
SEMICONDUCTOR DEVICE HAVING A STRAINED REGION |
摘要 |
The present disclosure provides devices and methods which provide for strained epitaxial regions. A method of semiconductor fabrication is provided that includes forming a gate structure over a fin of a semiconductor substrate and forming a recess in the fin adjacent the gate structure. A sidewall of the recess is then altered. Exemplary alterations include having an altered profile, treating the sidewall, and forming a layer on the sidewall. An epitaxial region is then grown in the recess. The epitaxial region interfaces the altered sidewall of the recess and is a strained epitaxial region.
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申请公布号 |
US2013228862(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201213411214 |
申请日期 |
2012.03.02 |
申请人 |
LEE TSUNG-LIN;YUAN FENG;CHIANG HUNG-LI;YEH CHIH CHIEH;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
LEE TSUNG-LIN;YUAN FENG;CHIANG HUNG-LI;YEH CHIH CHIEH |
分类号 |
H01L27/12;H01L21/20;H01L21/336 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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