发明名称 |
Multiple-Gate Semiconductor Device and Method |
摘要 |
A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.
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申请公布号 |
US2013230958(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201313863963 |
申请日期 |
2013.04.16 |
申请人 |
COMPANY, LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE TUNG YING;WENG LI-WEN;CHAN CHIEN-TAI;LIN DA-WEN;LIN HSIEN-CHIN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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