| 摘要 |
PROBLEM TO BE SOLVED: To control precisely by a simple method so as to locally increase a film thickness, in manufacturing a film on a film deposition surface 50a of a substrate by plasma CVD method.SOLUTION: A film deposition apparatus for depositing a film on a film deposition surface 50a of a substrate 50 by plasma CVD method includes: a vacuum chamber 10 for performing the plasma CVD method; a power supply 20 for causing a source gas to turn to plasma; a magnet 60 arranged on an opposite surface side to the film deposition surface 50a of the substrate 50 as a magnetic field generation source; and a shielding plate 70 formed of a high magnetic permeability material and arranged between the substrate 50 and the magnet 60 as a shielding member. A film thickness of a film 80 to be deposited on the substrate 50 is controlled by adjusting a shape and an arrangement manner of the shielding plate 70. Thus, the film deposition apparatus can finely control a film thickness by adjusting the shape and arrangement of the shielding plate 70 without complicating the arrangement and shape of the magnet 60 or the adjustment of magnetic field intensity. |
