发明名称 METHOD FOR POLISHING DOUBLE-SIDE MIRROR POLISHED SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for polishing a double-side mirror polished silicon wafer, which realizes a high-quality surface morphology on the silicon wafer, thereby enabling further miniaturization of an electronic circuit.SOLUTION: In a method for polishing a double-side mirror polished silicon wafer, a three-stage polishing method is employed for polishing a silicon wafer. In the method, polishing conditions are changed for each stage and a double-side polisher is used. Furthermore, the three-stage polishing is performed as a first stage polishing using a sun gear style double side polishing, and as a second stage polishing and a finish stage polishing using a sun gear free style double side polishing in which the polishing is performed in a plane parallel to the surface of a carrier plate, the carrier plate moves in a circular motion without rotating. Thus, a high-quality surface morphology on the silicon wafer is realized, thereby enabling a further miniaturization of an electronic circuit.
申请公布号 JP2013175796(A) 申请公布日期 2013.09.05
申请号 JP20130124060 申请日期 2013.06.12
申请人 SUMCO CORP 发明人 MIURA TOMONORI;TAKAISHI KAZUNARI
分类号 H01L21/304 主分类号 H01L21/304
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