发明名称 |
METHOD OF FORMING A PATTERN IN A SEMICONDUCTOR DEVICE AND METHOD OF FORMING A GATE USING THE SAME |
摘要 |
A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer is formed along a sidewall of the buffer pattern in the cell region, and a hard mask layer remains on the object layer in the peripheral region. The buffer layer is removed, and the spacer is separated along a second direction different from the first direction, thereby forming a cell hard mask pattern. A peripheral hard mask pattern is formed in the peripheral region. A minute pattern is formed using the cell and peripheral hard mask patterns in the substrate. Therefore, a line width variation or an edge line roughness due to the photolithography process is minimized.
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申请公布号 |
US2013230979(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201313845851 |
申请日期 |
2013.03.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYOU CHOONG-RYUL;KANG HEE-SUNG |
分类号 |
H01L21/027;H01L21/311;G03F7/00;H01L21/033;H01L21/28;H01L21/3213 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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