THIN FILM TRANSISTOR INVERTER DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: An inverter device using a thin film transistor and a manufacturing method thereof are provided to improve the reproducibility of electrical characteristics by inducing an electrical characteristic difference between two thin film transistors through a gate insulation layer with a first thickness and a second thickness. CONSTITUTION: A gate electrode (120) is deposited on a substrate (110). A gate insulating layer (130) is deposited on the gate electrode with a first thickness. A semiconductor layer (140) is deposited on the gate insulation layer with the first thickness. A source electrode (152) and a drain electrode (154) are deposited on the semiconductor layer. The gate insulation layer is deposited on a gate electrode (120') with a second thickness. The first thickness is different from the second thickness. A semiconductor layer (140') is deposited on the gate insulation layer with the second thickness.