发明名称 |
METHOD FOR MANUFACTURING SOLAR CELL |
摘要 |
PROBLEM TO BE SOLVED: To provide a PCVD method capable of forming microcrystalline silicon using a hydrogen gas at a low flow rate and to provide a more inexpensive microcrystalline silicon solar cell.SOLUTION: The method for forming microcrystalline silicon by PCVD method comprises the steps of: aligning a plurality of antennas having both ends respectively connected to an a high frequency power supply and the ground in a plane in a vacuum chamber to arrange as an array antenna structure; arranging a substrate opposite to the array antennas; setting a temperature of the substrate to 150-250°C; introducing a mixed gas including a hydrogen gas and a silane gas; supplying high frequency power to the plurality of antennas to generate plasma; and adjusting a flow rate ratio of the hydrogen gas to the silane gas in a range of 1-10 to form a microcrystalline silicon film where a ratio Ic/Ia of Raman scattering intensity Ic in the vicinity of 520 cmresulting from crystalline silicon and Raman scattering intensity Ia in the vicinity of 480 cmresulting from amorphous silicon is 2-6, on the substrate. |
申请公布号 |
JP2013175780(A) |
申请公布日期 |
2013.09.05 |
申请号 |
JP20130101090 |
申请日期 |
2013.05.13 |
申请人 |
IHI CORP |
发明人 |
UEDA HITOSHI;YONEZAWA TOMOKO;ITO NORIKAZU |
分类号 |
H01L21/205;C23C16/24;H01L31/04 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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