| 摘要 |
PROBLEM TO BE SOLVED: To provide enhancement-mode GaN devices having a gate spacer, a gate metal material, and a gate compound that are self-aligned, and a method for fabricating the same.SOLUTION: The gate spacer, the gate metal material, and the gate compound are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface between the gate spacer and the gate compound has lower leakage than the interface between a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped group III-V compound corner on the drain contact side, which leads to lower gate leakage current and improved gate reliability. |
