SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a group III-V compound semiconductor layer having a principal surface which is a non-polar surface or a semipolar surface and having a low surface defect density.SOLUTION: In a semiconductor device manufacturing method, a base substrate 10 in which a substrate surface 11 includes a substrate principal surface portion 11a, and a crystal growth surface portion 11b which has a different plane orientation from that of the substrate principal surface portion 11a and which is capable of crystal growth of a group III-V compound semiconductor is used. The semiconductor device manufacturing method comprises a semiconductor layer formation process of forming a group III-V compound semiconductor layer 20 having a principal surface of a non-polar surface or a semipolar surface by crystal growing a group III-V compound semiconductor in a layered manner with starting from the crystal growth surface portion 11b on the substrate surface 11 of the base substrate 10. In the semiconductor layer formation process, the III-V compound semiconductor layer 20 is formed into a thickness of 100 μm or more.