发明名称 |
FLAT PANEL DISPLAY DEVICE COMPRISING POLYSILICON THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.
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申请公布号 |
US2013230976(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201313864040 |
申请日期 |
2013.04.16 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK JI-YONG;KOO JAE-BON;PARK HYE-HYANG;LEE KI-YONG;LEE UL-HO |
分类号 |
H01L21/02;H01L21/20;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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