发明名称 FLAT PANEL DISPLAY DEVICE COMPRISING POLYSILICON THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.
申请公布号 US2013230976(A1) 申请公布日期 2013.09.05
申请号 US201313864040 申请日期 2013.04.16
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 PARK JI-YONG;KOO JAE-BON;PARK HYE-HYANG;LEE KI-YONG;LEE UL-HO
分类号 H01L21/02;H01L21/20;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786 主分类号 H01L21/02
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