发明名称 |
FINFETS AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>PURPOSE: A FinFET and a manufacturing method thereof are provided to improve the performance of a device by reducing stress applied to external fins. CONSTITUTION: A substrate (202) includes a main surface (202s). The substrate further includes a sparse region (202a) and a dense region (202b). A plurality of first trenches (212a) are downwardly extended from the main surface of the substrate to a first height. The first trenches have first widths. A plurality of second trenches (212b) are downwardly extended from the main surface of the substrate to a second height. The second trenches have second widths that are narrower than the first widths.</p> |
申请公布号 |
KR20130098833(A) |
申请公布日期 |
2013.09.05 |
申请号 |
KR20120109918 |
申请日期 |
2012.10.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN YU CHAO;PENG CHIH TANG;YANG SHUN HUI;CHEN RYAN CHIA JEN;CHEN CHAO CHENG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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