发明名称 FINFETS AND METHOD OF FABRICATING THE SAME
摘要 <p>PURPOSE: A FinFET and a manufacturing method thereof are provided to improve the performance of a device by reducing stress applied to external fins. CONSTITUTION: A substrate (202) includes a main surface (202s). The substrate further includes a sparse region (202a) and a dense region (202b). A plurality of first trenches (212a) are downwardly extended from the main surface of the substrate to a first height. The first trenches have first widths. A plurality of second trenches (212b) are downwardly extended from the main surface of the substrate to a second height. The second trenches have second widths that are narrower than the first widths.</p>
申请公布号 KR20130098833(A) 申请公布日期 2013.09.05
申请号 KR20120109918 申请日期 2012.10.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN YU CHAO;PENG CHIH TANG;YANG SHUN HUI;CHEN RYAN CHIA JEN;CHEN CHAO CHENG
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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