发明名称 Vacuum Plasma Process Chamber and Method processing substrate by using thereof
摘要 PURPOSE: A vacuum plasma process chamber and a substrate processing method using the same are provided to prevent environmental pollutants by processing a substrate with plasma in a vacuum state. CONSTITUTION: A plasma source supply unit is arranged in a process chamber(100). An open frame part(30) comprises the bottom surface of the process chamber. The plasma source supply unit is composed of a shower head(20). The shower head has a hollow planar shape. The open frame part is combined with the lower side of the process chamber.
申请公布号 KR101304093(B1) 申请公布日期 2013.09.05
申请号 KR20110073543 申请日期 2011.07.25
申请人 发明人
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
代理机构 代理人
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