SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To ensure a threshold voltage before irradiation without increasing an impurity concentration of a semiconductor substrate in a semiconductor device manufacturing method of performing irradiation of particle beams or radiant rays for lifetime control and in a semiconductor device manufactured by the method.SOLUTION: A semiconductor device manufacturing method comprises: an irradiation process in which a semiconductor substrate on which a transistor having a gate insulation film and a gate electrode are formed on a principal surface side is irradiated with at least either of particle beams or radiant rays from the principal surface side of the semiconductor substrate; an annealing process of removing crystal defects included in the gate insulation film and the gate electrode after the irradiation process; and a pre-annealing process of decreasing the contained amounts of hydrogen molecules and water molecules which are contained in the gate insulation film and the gate electrode to a predetermined concentration before the irradiation process. In a semiconductor device manufactured by the above-described method, a concentration of thermally-stable defects existing in the gate insulation film is decreased to the predetermined concentration.