发明名称 |
Method and Apparatus for Plasma Dicing a Semi-conductor Wafer |
摘要 |
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. |
申请公布号 |
US2013230972(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201313764110 |
申请日期 |
2013.02.11 |
申请人 |
PLASMA-THERM LLC |
发明人 |
JOHNSON CHRIS;JOHNSON DAVID;PAYS-VOLARD DAVID;MARTINEZ LINNELL;WESTERMAN RUSSELL |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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