发明名称 MULTI-GATE SEMICONDUCTOR DEVICES
摘要 PROBLEM TO BE SOLVED: To provide a multi-gate semiconductor device which has inter-gate conductive regions connected to a balance resistor and, when used as a switch element, reduces the insertion loss and the component size while improving the OFF-state nonlinearity.SOLUTION: A connection point of a balance resistor to inter-gate conductive regions is located in an inter-gate conductive region having a wider gate spacing formed at a turning region of meanderingly disposed gate electrodes, and is formed at a position between two ends, other than the very ends, of gate electrodes.
申请公布号 JP2013175777(A) 申请公布日期 2013.09.05
申请号 JP20130097675 申请日期 2013.05.07
申请人 WIN SEMICONDUCTORS CORP 发明人 TAKATANI SHINICHIRO
分类号 H01L21/337;H01L21/28;H01L21/338;H01L21/822;H01L27/04;H01L27/095;H01L29/417;H01L29/47;H01L29/778;H01L29/808;H01L29/812;H01L29/872 主分类号 H01L21/337
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