| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid capable of obtaining an excellent polishing speed for a TEOS insulating film, effectively improving a polishing speed for a low-k film even when a weak insulating film such as a low-k film is used, and achieving suppression of a scratch caused by agglomeration of solid abrasive grains or the like.SOLUTION: The polishing liquid, using solid abrasive grains used for chemical mechanical polishing in planarization processes of semiconductor integrated circuits, is used for polishing of a substrate having an insulating film laminated with a TEOS insulating film and a low-k film, contains a quaternary ammonium cation, a corrosion inhibitor, a polymer having a sulfone group at a terminal, an inorganic particle, and an organic acid, and has a pH of 1 to 7. |
