发明名称 |
SYSTEM AND METHOD FOR INTEGRATED CIRCUITS WITH CYLINDRICAL GATE STRUCTURES |
摘要 |
A device and method for integrated circuits with surrounding gate structures are disclosed. The device includes a semiconductor substrate and a fin structure on the semiconductor substrate. The fin structure is doped with a first conductivity type and includes a source region at one distal end and a drain region at the opposite distal end. The device further includes a gate structure overlying a channel region disposed between the source and drain regions of the fin structure. The fin structure has a rectangular cross-sectional bottom portion and an arched cross-sectional top portion. The arched cross-sectional top portion is semi-circular shaped and has a radius that is equal to or smaller than the height of the rectangular cross-sectional bottom portion. The source, drain, and the channel regions each are doped with dopants of the same polarity and the same concentration. |
申请公布号 |
US2013228833(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201313848707 |
申请日期 |
2013.03.21 |
申请人 |
INTERNATIONAL (SHANGAI) CORPORATION SEMICONDUCTORMANUFACTURING;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGAI) CORPORATION |
发明人 |
XIAO DE YUAN;CHEN GUO QING;LEE ROGER;YEN CHIN FU;XING SU;HUANG XIAO LU;YANG YONG SHENG |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|