TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, SEMICONDUCTOR UNIT, METHOD OF MANUFACTURING THE SEMICONDUCTOR UNIT, DISPLAY, AND ELECTRONIC APPARATUS

摘要

PURPOSE: A transistor, a method for manufacturing the transistor, a semiconductor device, a method for manufacturing the semiconductor device, a display device, and an electronic device are provided to improve electrical characteristics by preventing an oxide semiconductor layer from being damaged in a manufacturing process. CONSTITUTION: An oxide semiconductor layer (12) and a gate electrode are formed on a substrate (11). The oxide semiconductor layer includes a channel region. The gate electrode faces the channel region. A cover layer which covers the gate electrode and the oxide semiconductor layer is formed. The infiltration of moisture from an insulation layer to the oxide semiconductor layer is suppressed by the substrate.