| 摘要 |
<p>Disclosed is a highly productive method for manufacturing a transparent conductive film. The method includes the step of sputter depositing a transparent, amorphous tin-indium oxide conductive layer on a transparent substrate. The surface of the substrate, on which the transparent conductive layer is formed, has an arithmetic mean roughness Ra of 1.0 or less. The sputter depositing step is performed under an atmosphere having a water partial pressure of 0.1% or less based on an AR gas partial pressure at a base material temperature of more than 100° C. and 200° C. or less, using a metal target or oxide target in which the amount of tin atoms is more than 6% by weight and 15% by weight or less, based on the total weight of indium and tin atoms.</p> |
