| 摘要 |
PROBLEM TO BE SOLVED: To transfer closely adjacent patterns when a plurality of regions on a substrate are individually exposed.SOLUTION: A photomask comprises: a first line pattern and a second line pattern that are arranged adjacent to each other along a first direction; and first and second connection patterns that are arranged on a portion corresponding to a peripheral portion so as to be in contact with the first line pattern and the second line pattern. The widths of the first and second connection patterns are wider than those of the first and second line patterns in a second direction orthogonal to the first direction. A distance from a virtual line extending along the first direction between the first line pattern and the second line pattern to the center line of the first connection pattern is greater than a distance from the virtual line to the center line of the first line pattern. A distance from the virtual line to the center line of the second connection pattern is greater that a distance from the virtual line to the center line of the second line pattern. |
