| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor light-emitting element, a group III nitride semiconductor light-emitting element, and a reticle, excellent in internal quantum efficiency, light extraction efficiency, and productivity.SOLUTION: A method of manufacturing a group III nitride semiconductor light-emitting element includes a substrate processing step in which a main surface composed of a flat surface and a protruding part 13 is formed on a substrate 10, an epitaxial step in which a base material layer is epitaxial-grown so as to cover the flat surface and the protruding part 13 on the main surface of the substrate 10, and an LED lamination step in which an LED structure is formed by epitaxial-growing a group III nitride semiconductor. In the substrate processing step, a mask pattern 15 is sequentially formed in regions R1 and R2 on a flat surface with the use of a polygonal reticle 51 of which two pairs of end parts, facing each other, are parallel in top view by a stepper exposure method, and then, by etching the flat surface, protruding parts 13 at arbitrary three points arranged to adjoin each other are formed to be an isosceles triangle in top view. |
