发明名称 |
Semiconductor Devices and Manufacturing and Design Methods Thereof |
摘要 |
Semiconductor devices and manufacturing and design methods thereof are disclosed. In one embodiment, a semiconductor device includes an active FinFET disposed over a workpiece comprising a first semiconductive material, the active FinFET comprising a first fin. An electrically inactive FinFET structure is disposed over the workpiece proximate the active FinFET, the electrically inactive FinFET comprising a second fin. A second semiconductive material is disposed between the first fin and the second fin.
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申请公布号 |
US2013228866(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201213410207 |
申请日期 |
2012.03.01 |
申请人 |
LEE TUNG YING;GUO WEN-HUIE;CHANG CHIH-HAO;CHANG SHOU-ZEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE TUNG YING;GUO WEN-HUIE;CHANG CHIH-HAO;CHANG SHOU-ZEN |
分类号 |
H01L27/088;G06F17/50;H01L21/8234 |
主分类号 |
H01L27/088 |
代理机构 |
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地址 |
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