HIGH-DENSITY PIEZOELECTRIC THICK FILM HAVING ALUMINA BUFFER LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A high density piezoelectric thick film having an alumina buffer layer and a method for manufacturing the same are provided to prevent the Si of a silicon substrate from being diffused into a piezoelectric thick film by using the alumina buffer layer formed between the silicon substrate and the piezoelectric thick film. CONSTITUTION: An alumina buffer layer(20) is formed on a silicon substrate(10). A piezoelectric thick film(30) is formed on the alumina buffer layer. The alumina buffer layer is deposited on the silicon substrate and heat-treated. The alumina buffer layer prevents the Si diffusion of the silicon substrate to the piezoelectric thick film. The piezoelectric thick film is formed by sintering a piezoelectric paste on the alumina buffer layer.