| 摘要 |
PROBLEM TO BE SOLVED: To provide techniques for resolving a problem of noise sensitivity and reducing power consumption in reading a voltage stored on a random access memory bit cell.SOLUTION: A memory architecture comprises at least one memory bit cell, and at least one read bit line whose voltage is controlled and changed by a current in a transistor inside the at least one memory bit cell. Each of the at least one memory bit cell is electrically connected to one of the at least one read bit line. The current in the transistor is stopped by an indicator. The indicator responds to an indication that the voltage on the at least one read bit line is greater than a predetermined threshold. |
