| 摘要 |
PROBLEM TO BE SOLVED: To provide a through hole formation method, etc. which inhibits misalignment of center axes of holes formed on both surfaces of a substrate, also inhibits the occurence of notching without causing metal contamination thereby improving the dimensional accuracy, and performs dry etching to form through holes on the silicon substrate.SOLUTION: In a through hole formation method, through holes are formed in a silicon substrate by dry etching. The through hole formation method includes steps of: forming a composite substrate by fixing the silicon substrate to a support substrate supporting the silicon substrate; and performing dry etching to the composite substrate from the silicon substrate side thereby forming the through holes in the silicon substrate. A support substrate, in which holes are formed in regions corresponding to through hole formation regions of the silicon substrate and located on a surface of the support substrate which contacts with the silicon substrate, is used as the support substrate. |
