EQUIVALENT CIRCUIT OF BIDIRECTIONAL SWITCH, SIMULATION METHOD FOR BIDIRECTIONAL SWITCH, AND SIMULATION DEVICE FOR BIDIRECTIONAL SWITCH

摘要

Provided is a simulation method for simulating electrical properties of a bidirectional switch formed as a single element and having a double gate structure. A simulation is performed using an equivalent circuit having a symmetrical structure in which a drain electrode of a JFET and a drain electrode of another JFET are connected via a resistor.